What are the characteristics of IGBT?

Insulated-gate bipolar transistor

Is IGBT unipolar or bipolar?

The IGBT cannot conduct current in the reverse direction (from emitter to collector) even with a positive Vge applied to it, because it has a bipolar-type structure.

What are the dynamic characteristics of IGBT?

NPT IGBTs have a positive temperature coefficient, meaning that as the junction temperature increases, VCE(on) increases. PT IGBTs on the other hand tend to have a slightly negative temperature coefficient. For both types, the temperature coefficient tends to increase with increasing collector current.

Is IGBT unipolar?

IGBT is made up of emitter, collector and gate terminals, whereas MOSFET consists of source, drain and gate terminals. IGBT usage is predominated for higher voltage applications as it is unipolar and requires additional freewheeling diode for the reverse flow of current.

What is the function of IGBT?

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

Why is IGBT bipolar?

IGBTs is a bipolar device that utilizes two types of carriers, electrons and holes, resulting from the complex configuration that features a MOSFET structure at the input block and bipolar output, making it a transistor that can achieve low saturation voltage (similar to low ON resistance MOSFETs) with relatively fast …

What is the working principle of IGBT?

IGBT Principle of Operation IGBT requires only a small voltage to maintain conduction in the device unlike in BJT. The IGBT is a unidirectional device, that is, it can only switch ON in the forward direction. This means current flows from the collector to the emitter unlike in MOSFETs, which are bi-directional.

What are the switching characteristics of an IGBT?

Switching Characteristics of IGBT The IGBT is a Voltage controlled device, hence it only requires a small voltage to the gate to stay in the conduction state. And since these are unidirectional devices, they can only switch current in the forward direction which is from collector to emitter.

What’s the breakdown voltage of an IGBT junction?

The breakdown voltage of this junction is about 10 to 50V and is shown in the IGBT symbol as an unconnected terminal (Figure 2). For this reason IGBTs have an undefined reverse conduction characteristic, while power MOSFETs have a well de- fined diode behavior.

What are the temperature ratings for an IGBT?

A violation of the temperature ratings can lead to a reduced safe operating area and consequently a sudden device failure or to a reduced operational lifetime. IEC 60747-9 gives a range of temperature ratings for IGBTs like storage temperature (T. stg), case temperature (T. c) and virtual junction temperature (T. vj).

How is IGBT different from a bipolar transistor?

IGBT combines the low saturation voltage of a transistor with the high input impedance and switching speed of a MOSFET. The outcome obtained from this combination delivers the output switching and conduction characteristics of a bipolar transistor, but the voltage is controlled like a MOSFET.