What is ion beam etching?

Ion beam etching (IBE) is a thin film technique that utilizes an ion source to carry out material removal processes on a substrate. IBE is a type of ion beam sputtering and, whether it’s used for pre-clean or patterned etching, it helps ensure excellent adhesion and precise formation of 3D structures.

What is the difference between ICP and RIE?

ICP-RIE technology ICP-RIE etching is based on the use of an inductively coupled plasma source. The key differentiation between ICP RIE and RIE is the separate ICP RF power source connected to the cathode that generates DC bias and attracts ions to the wafer.

What is the difference between plasma etching and reactive ion etching?

The most notable difference between reactive ion etching and isotropic plasma etching is the etch direction. While RIE provides a much stronger etch, it also provides a directional etch. The plasma will etch in a downward direction with almost no sideways etching.

How are reactive species used in ion beam etching?

In Reactive Ion Beam Etching (RIBE) and Chemically Assisted Ion Beam Etching (CAIBE) modes, reactive species are added (CHF 3, SF 6, N 2, O 2, etc.) to the source (RIBE) or to the gas ring (CAIBE) to increase volatility of etch products and selectivity to the mask material.

How does reactive ion etching ( RIE ) work?

Reactive Ion Etching (RIE) uses a combination of chemical and physical reactions to remove material from a substrate; it is the simplest process that is capable of directional etching. A highly anisotropic etching process can be achieved in RIE through the application of energetic ion bombardment of the substrate during the plasma chemical etch.

How is reactive ion etching used in microfabrication?

Reactive-ion etching. Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field.

What is gas ring mode in ion beam etching?

The gas ring mode is sometimes known as Chemically Assisted Ion Beam Etching or CAIBE. Using chemically reactive gas, etch rates and selectivities to mask material can be improved.